High Resolution & Fast Writing

BEAMER enables high resolution in conjunction with fast writing through techniques such as Bulk & Sleeve split, Coarse & Fine split, Intelligent Multipass and PEC.

3-D e-Beam Lithography

The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure doses are automatically calculated based on the resist contrast curve, the proximity effect PSF, and the layout specifying the target thickness at all positions.

Multi-Pass Exposure

Multi-pass exposure reduces field stitching issues and improves line-edge roughness and resolution. BEAMER makes multi-pass easy and highly effective. Standard multi-pass (2, 4, or 9 passes, with or without field-shift, subfield-shift) or intelligent multi-pass (dose or feature selective, field blending) provide unique capabilities for improving lithographic quality on applications such as photonics, nano devices, masks, 3D structures, and the like.

Fracture Optimization

Reverse tone photonic crystals are an interesting fracturing challenge. Standard mechanisms lead to sub-optimal fracturing that need to be improved. A combination of boolean operations in conjunction with curved fracturing results in highly symmetric fracturing of the photonic crystals.

OPC for Mask Aligner

Lithography simulation with LAB enables OPC for Mask Aligner:

• Iso / dense bias adjustement
• Size and position of OPC feature (serifs, hammerhead)
• Semi-automated layout optimization

Source Mask Optimization

LAB supports the new MO Exposure Optics of SUSS mask aligner:

• Includes a library of predefined source shapes
• Allows to optimize source shape and mask layout in combination